Open AccessGate‐driver circuit with a variable supply voltage to influence the switching losses
Author(s) -
Ruthardt Johannes,
Hermann Chris,
Wölfle Julian,
Fischer Manuel,
RothStielow Jörg
Publication year - 2019
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2018.8129
Subject(s) - switching time , junction temperature , voltage , semiconductor , materials science , power (physics) , electrical engineering , power semiconductor device , semiconductor device , gate driver , driver circuit , optoelectronics , engineering , physics , nanotechnology , layer (electronics) , quantum mechanics
The lifetime of semiconductor devices used in power electronics depends on the junction temperature. With a suitable junction temperature control system, the lifetime of semiconductor devices is extended. These control systems require a possibility to influence the power losses of the semiconductor devices and therefore the junction temperature. The proposed gate‐driver circuit has a variable supply voltage in order to influence the switching speed of the semiconductor devices. This affects the switching losses. In addition, the adjustable switching speed can be used to prevent voltage overshoots during the switching transition or to decrease electromagnetic emission. The main advantage of this gate‐driver circuit is its simple structure. This study focuses on the switching losses.