Open AccessComparison of conventional and cascode drive of SiC BJTs
Author(s) -
McNeill Neville,
Broadmeadow Mark A. H.,
Roscoe Nina,
Finney Stephen
Publication year - 2019
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2018.8034
Subject(s) - cascode , bipolar junction transistor , materials science , transistor , common emitter , electronic circuit , electrical engineering , voltage , optoelectronics , field effect transistor , engineering
This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low‐voltage silicon metal‐oxide‐semiconductor field‐effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when switching a current of 2.5 A and a voltage of 600 V in a buck converter.
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