
Experiment on Ka‐band amplifiers degraded and damaged by electromagnetic waves
Author(s) -
Wang ZhanLiang,
Luo Jinjin,
Xiong Xu,
Gong YuBin,
Wei YanYu,
Duan ZhaoYun,
Gong Huarong
Publication year - 2018
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2018.0098
Subject(s) - amplifier , microwave , transistor array , power (physics) , current sense amplifier , electrical engineering , pulse (music) , broad band , electromagnetic radiation , materials science , physics , engineering , optics , telecommunications , operational amplifier , detector , cmos , quantum mechanics
Research on amplifiers injected by high‐power microwave is important and lays foundation for reinforce technology. This study reports an experiment on Ka‐band amplifiers injected and damaged by electromagnetic waves. The continuous wave and the pulse wave are injected into the amplifiers which are based on HMMC5040 chips. The injected power level increases until the amplifiers are damaged. The results are recorded and analysed. The results show that: (i) the uncharged amplifiers need more injected power to be damaged compared with the charged amplifiers. (ii) To degrade or damage the amplifiers, the pulse wave need more power. (iii) The first node of the HMMC5040 chip is damaged in the experiment, so this is the key part for anti‐radiation design.