Open AccessTCAD simulation of a proposed 3D CdZnTe detector
Author(s) -
Ellakany Abdelhady A.,
Abouelatta Mohamed,
Shaker Ahmed,
Sayah Gihan T.,
ElBanna Mohammed
Publication year - 2017
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2017.0342
Subject(s) - cadmium zinc telluride , detector , optoelectronics , materials science , silicon , leakage (economics) , semiconductor , voltage , compound semiconductor , semiconductor detector , physics , electrical engineering , optics , nanotechnology , engineering , epitaxy , layer (electronics) , economics , macroeconomics
Cadmium zinc telluride (CdZnTe) detectors are potential replacements for traditional room temperature detectors, such as silicon (Si), in many applications. CdZnTe has been considered as a promising semiconductor material for hard X‐ray and Γ ‐ray detection because the stopping power of CdZnTe is better than traditional materials. To exploit them for practical applications, their behaviour under harsh conditions must be fully characterised and understood. In this study, the electrical characteristics of the CdZnTe three‐dimensional (3D) detector are comprehensively studied through TCAD simulations. The very low leakage current, which is about 5.5 pA at 200 V, allows applying higher bias voltages than possible with traditional two‐dimensional (2D) detectors. Moreover, the effect of the temperature on the leakage current is studied. Additionally, the collection time is found to be about 2 ns and the amplitude of the current is 0.8 nA at 200 V. The obtained results prove the applicability of the CdZnTe 3D detector under various operating conditions.