Open AccessTunable linearity enhancement for 180 nm complementary metal–oxide–semiconductor LNA with active feedback
Author(s) -
Khaleel Farooq Abdulghafoor,
Abbas Mohammed Nadhim
Publication year - 2017
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2017.0067
Subject(s) - linearity , transistor , superposition principle , low noise amplifier , amplifier , materials science , noise figure , electronic engineering , optoelectronics , electrical engineering , field effect transistor , noise (video) , cmos , voltage , computer science , physics , engineering , quantum mechanics , artificial intelligence , image (mathematics)
The authors present a tunable linearity improvement of complementary metal–oxide–semiconductor low‐noise amplifier (LNA) using derivative superposition method and an active MOS field‐effect transistor feedback transistor. The proposed LNA achieves a third‐order input intercept point (IIP3) of 21 dBm, 9.43 dB gain, and 2.4 dB minimum noise figure. In addition, the proposed LNA method dissipates 28.4 mW supplied from 1.8 V voltage source. The proposed LNA provides flexibility to tune the power dissipation and linearity according to the work environment. They perform the simulation with keysight ADS2016.01 software utilising 180 nm TSMC model files.