Open AccessHighly sensitive 10 Gb/s PAM‐4 optical receiver circuit for three‐dimensional optoelectronic integration
Author(s) -
Vokić Nemanja,
Milovančev Dinka,
Goll Bernhard,
Zimmermann Horst
Publication year - 2016
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2016.0242
Subject(s) - responsivity , optoelectronics , photodetector , resistor , materials science , voltage , photodiode , signal (programming language) , photonics , chip , sensitivity (control systems) , semiconductor , electronic circuit , electrical engineering , electronic engineering , computer science , engineering , programming language
This study presents a 0.35 µm silicon germanium bipolar complementary metal‐oxide‐semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three‐dimensional integration. Measurements were conducted on a test‐chip with a voltage‐input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM‐4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10 −9 .