Open AccessGaN high electron mobility transistors: a review from parasitic elements extraction's perspective
Author(s) -
Jarndal Anwar,
Kouki Ammar
Publication year - 2016
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2016.0161
Subject(s) - pinch , transistor , materials science , extraction (chemistry) , embedding , electron , optoelectronics , computational physics , computer science , physics , electrical engineering , artificial intelligence , chemistry , engineering , nuclear physics , chromatography , voltage
In this study, three different parameter extraction approaches for GaN high electron mobility transistors are presented and evaluated. The first approach depends on only cold pinch‐off measurements, the second approach based on cold pinch‐off and forward measurements and the last one uses de‐embedding open structure in addition to unbiased cold measurements at V DS = 0 V and V GS = 0 V. The extracted values using the first two methods have a very good agreement with the extracted values using the last mentioned procedure. This study results verify the applicability of using either pinch‐off measurements or cold unbiased measurements with open structure to extract the device parasitic elements. This accordingly will reduce the cost of using extra de‐embedding structures or high‐current stress forward measurements.