Open AccessOne watt gallium arsenide class‐E power amplifier with a thin‐film bulk acoustic resonator filter embedded in the output network
Author(s) -
Holzer Kyle,
Walling Jeffrey S.
Publication year - 2015
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2015.0058
Subject(s) - choke , amplifier , resonator , materials science , gallium arsenide , electrical engineering , optoelectronics , power added efficiency , power (physics) , rf power amplifier , filter (signal processing) , electronic engineering , physics , engineering , cmos , quantum mechanics
Integration of a class‐E power amplifier (PA) and a thin‐film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out‐of‐band spectrum suppression. A discrete gallium arsenide pseudomorphic high‐electron‐mobility transistor is implemented to operate as a class‐E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class‐E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE) of 58%. The improved out‐of‐band spectrum filtering is compared to a traditional class‐E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out‐of‐band emissions.