Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method | Zendy

Gholami Mayani Mahdieh | Zendy; Asadi Shahrooz | Zendy

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Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method

Author(s) -

Gholami Mayani Mahdieh,

Asadi Shahrooz

Publication year - 2018

Publication title -

iet science, measurement and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.418

H-Index - 49

eISSN - 1751-8830

pISSN - 1751-8822

DOI - 10.1049/iet-smt.2017.0398

Subject(s) - dual (grammatical number) , electron , time domain , transistor , computer science , electron mobility , electronic engineering , computational physics , physics , electrical engineering , materials science , optoelectronics , engineering , quantum mechanics , voltage , computer vision , art , literature

A dual‐gate aluminium gallium arsenide (GaAs)/GaAs pseudomorphic high electron mobility transistor is analysed based on the distributed modelling approach, wherein the transistor is considered as an active multi‐conductor transmission line. Discretisation of the governing matrix Telegrapher's equation is carried out using the implicit Crank–Nicolson‐finite‐difference time‐domain (CN‐FDTD) method. The results obtained from the proposed method are compared with the results of the conventional leap‐frog (LF) FDTD scheme. It is observed that the unconditionally stable CN method is in good agreement with the LF method even by increasing the time step size by the factor of 5000, leading to a dramatic decrease in the central processing unit time.

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