Open AccessAnalysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method
Author(s) -
Gholami Mayani Mahdieh,
Asadi Shahrooz
Publication year - 2018
Publication title -
iet science, measurement and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.418
H-Index - 49
eISSN - 1751-8830
pISSN - 1751-8822
DOI - 10.1049/iet-smt.2017.0398
Subject(s) - finite difference time domain method , gallium arsenide , transistor , discretization , high electron mobility transistor , time domain , transmission line , materials science , electronic engineering , mathematics , computational physics , mathematical analysis , physics , computer science , electrical engineering , optoelectronics , engineering , voltage , quantum mechanics , computer vision
A dual‐gate aluminium gallium arsenide (GaAs)/GaAs pseudomorphic high electron mobility transistor is analysed based on the distributed modelling approach, wherein the transistor is considered as an active multi‐conductor transmission line. Discretisation of the governing matrix Telegrapher's equation is carried out using the implicit Crank–Nicolson‐finite‐difference time‐domain (CN‐FDTD) method. The results obtained from the proposed method are compared with the results of the conventional leap‐frog (LF) FDTD scheme. It is observed that the unconditionally stable CN method is in good agreement with the LF method even by increasing the time step size by the factor of 5000, leading to a dramatic decrease in the central processing unit time.