Open AccessDesign of class‐E M amplifier with consideration of parasitic non‐linear capacitances and on‐state resistance
Author(s) -
Abbasi Hamed,
Hayati Mohsen,
Kazimierczuk Marian K.,
Sekiya Hiroo
Publication year - 2020
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2020.0253
Subject(s) - state (computer science) , class (philosophy) , amplifier , electrical engineering , operational amplifier , parasitic capacitance , electronic engineering , computer science , mathematics , engineering , physics , capacitance , cmos , algorithm , quantum mechanics , artificial intelligence , electrode
In this study, the design of the class‐E M power amplifier is presented. In this design, the effects of on‐state resistance and non‐linear parasitic capacitances of the transistors are investigated. Two metal oxide semiconductor field‐effect transistors (MOSFETs) of IRFZ24N and IRF510 with different drain‐source resistances are used in the presented circuits. In the given design, the values of the operational frequency and duty ratio are 3.5 MHz and 0.5, respectively. This study shows the importance of considering non‐linear parasitic elements of MOSFET, especially drain‐source resistance in the designing of the class‐E M power amplifiers. It is shown that the class‐E M power amplifier with high MOSFET drain‐source resistance needs high DC input voltage for both the primary and auxiliary circuits. In the previous works, non‐linear on‐state resistance and non‐linear drain‐source and gate‐drain capacitances have not been included at the same time in the analyses. Two class‐E M amplifiers contain IRF510 and IRFZ24N are designed, simulated, and measured. The efficiency equal to 96.6% with 11.851 W output power at 3.5 MHz and the efficiency equal to 88.4% with 12.361 W output power are achieved for presented class‐E M amplifiers contain IRFZ24N and IRF510, respectively.