Open AccessSnapback‐free and low‐loss SAG‐LIGBT with self‐driving auxiliary gate
Author(s) -
Chen Weizhong,
Li Shun,
Huang Yao,
Huang Yi,
Han ZhengSheng
Publication year - 2020
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2019.1491
Subject(s) - snapback , anode , materials science , optoelectronics , electrical engineering , bipolar junction transistor , voltage , electrode , transistor , engineering , chemistry
A novel snapback‐free and low‐loss shorted‐anode lateral insulated bipolar transistor (SA‐LIGBT) based on silicon on insulator with self‐driving auxiliary gate (SAG) in the anode is proposed, named as SAG‐LIGBT. The SAG is characterised by metal oxide semiconductor (MOS) structure in the anode, and the gate of the MOS is shorted with the anode electrode, thus self‐driving without extra gate signal is achieved. At anode voltage V A = 0, the P‐base serving as a barrier to hinder electrons flowing into the N + anode. At V A = V on of the forward conduction, the P‐base is depleted to intrinsic, and the anode resistance R SA is increased from R P‐base to R intrinsic . At V A = V bus of the turn‐off state, the P‐base is fully depleted and an electron accumulation layer is formed under the SiO 2 , thus the R SA is decreased from R intrinsic to R n‐channel to provide a low‐resistance path for electron current. Consequently, the device not only eliminates the snapback effect but also reduces the turn‐off energy loss E off . Therefore, a better trade‐off is obtained between V on and E off . At the same V on , the E off of SAG‐LIGBT is decreased by 57 and 66% compared with separated shorted‐anode LIGBT (SSA‐LIGBT) and SA‐LIGBT, respectively. Moreover, the SAG‐LIGBT exhibits the shorter T off of 80 ns than the SSA‐LIGBT and vertical P‐collector and N‐buffer LIGBT at J A = 100 A/cm 2 .