Open AccessTemperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs
Author(s) -
Li Yuan,
Zhao Yuanfu,
Huang Alex Q.,
Zhang Liqi,
Huang Qingyun,
Yu Ruiyang,
Sen Soumik,
Ma Qingxuan,
He Yunlong
Publication year - 2020
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2019.0540
Subject(s) - high electron mobility transistor , materials science , gallium nitride , optoelectronics , transistor , voltage , trapping , power (physics) , electrical engineering , physics , nanotechnology , engineering , ecology , layer (electronics) , quantum mechanics , biology
High‐voltage enhancement‐mode (E‐mode) gallium nitride (GaN) high electron mobility transistor (HEMT) is a superior candidate to enable higher efficiency and higher power density when compared with silicon power devices in power converter applications. However, the dynamic R DS , ONproblem affects the conduction loss of the converter and remains one of the major issues that must be resolved. In this study, a comprehensive experimental evaluation and analysis method of the temperature‐dependent dynamic R DS , ONof GaN HEMT in a circuit level is proposed. A commercial E‐mode GaN HEMT (GS66508T) is used as a sample to study the temperature‐dependent dynamic R DS , ONusing a double‐pulse‐tester. The temperature‐dependent dynamic R DS , ONunder different DC‐link voltages and different load currents are studied and the results show a non‐monotonic temperature‐dependence of the dynamic R DS , ON . It is concluded that the temperature dependence of the buffer‐induced trapping and de‐trapping effect, and the temperature dependence of electron mobility together influence the dynamic R DS , ONof E‐mode GaN HEMT device during operation. This finding is important since in converter applications the devices are typically operating at elevated temperatures. The proposed comprehensive experimental method can be used to estimate and analyse the dynamic R DS , ONcharacteristics of other GaN devices.