Open AccessModel parameter calibration method of SiC power MOSFETs behavioural model
Author(s) -
Wen Yang,
Yang Yuan,
Gao Yong
Publication year - 2020
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2019.0400
Subject(s) - datasheet , silicon carbide , mosfet , calibration , sensitivity (control systems) , power (physics) , computer science , electronic engineering , power mosfet , transistor , waveform , transient (computer programming) , semiconductor device modeling , simulation , materials science , voltage , electrical engineering , cmos , engineering , mathematics , physics , statistics , telecommunications , radar , quantum mechanics , metallurgy , operating system
To accurately estimate the switching characteristics of silicon carbide (SiC) metal–oxide–semiconductor field effect transistor, simulating with the behavioural model is a common approach. However, due to different manufacture batches, processes and application conditions, the model parameters need to be calibrated after being extracted from the datasheet. To improve the transient precision of behavioural model for SiC power MOSFET and provide technicians with more realistic and accurate simulation results, in this study, a calibration method for the behavioural model parameter is proposed by analysing the sensitivity of the parameters on the switching characteristics. The analysis shows that the sensitivity of the parameters affecting the SiC MOSFET behaviour model in sequence are C gd , C gs , V th , R g,int , g f , L d , L S , C ds and C Dj . Using this sensitivity influence order, the corresponding model parameters can be corrected by observing the deviations between the experimental and simulation waveforms. Finally, double pulse tests were carried out and the comparison results indeed verify its accuracy under different working conditions. The proposed method is verified by Saber simulation software, and it can also be applied to other simulation software.