Open AccessSoft‐punch‐through buffer concept for 600–1200 V IGBTs
Author(s) -
Andenna Maxi,
Buitrago Elizabeth,
Corvasce Chiara,
Papadopoulos Charalampos,
Jabrany Rachid,
Rahimo Munaf
Publication year - 2019
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2019.0124
Subject(s) - buffer (optical fiber) , bipolar junction transistor , substrate (aquarium) , wafer , layer (electronics) , materials science , epitaxy , doping , optoelectronics , transistor , electrical engineering , composite material , engineering , voltage , oceanography , geology
A new soft‐punch‐through (SPT) buffer concept for 600–1200 V insulated‐gate bipolar transistors (IGBTs) based on thin wafer technology is proposed. The new SPT structure employs an epitaxial layer for the lightly doped n‐type drift region, which is grown on a thick starting material or substrate. The n‐type substrate serves as the SPT buffer region. The doping concentration of both drift and buffer regions are comparably low with the buffer region having a higher doping level. The design options of this new concept are discussed based on experimental data and 1200 V IGBTs using the new buffer concept are compared to IGBTs employing previously published buffer technology.