Open AccessLateral and vertical power transistors in GaN and Ga 2 O 3
Author(s) -
Hilt Oliver,
Bahat Treidel Eldad,
Wolf Mihaela,
Kuring Carsten,
Tetzner Kornelius,
Yazdani Hossein,
Wentzel Andreas,
Würfl Joachim
Publication year - 2019
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2019.0059
Subject(s) - transistor , materials science , gallium nitride , optoelectronics , silicon carbide , gallium oxide , wide bandgap semiconductor , power semiconductor device , engineering physics , electrical engineering , oxide , voltage , nanotechnology , engineering , layer (electronics) , metallurgy
Vertical silicon carbide transistors and lateral gallium nitride (GaN) transistors for power‐electronic applications currently target applications with different voltage and power ratings. Meanwhile, research and development activities continue on vertical GaN transistors and new gallium oxide (Ga 2 O 3 ) transistors. What are their perspectives in the application and how do they compete against each other and against established transistor technologies? This study discusses the specific characteristics of lateral and vertical GaN and Ga 2 O 3 transistors to assess their strengths and weaknesses.