Open AccessModelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors
Author(s) -
Kumar Ashwani,
De Souza Maria Merlyne
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0438
Subject(s) - heterojunction , materials science , optoelectronics , threshold voltage , gallium nitride , aluminium nitride , transistor , voltage , wide bandgap semiconductor , aluminium , field effect transistor , electrical engineering , nanotechnology , layer (electronics) , engineering , metallurgy
p‐Channel gallium nitride (GaN) metal–oxide–semiconductor heterostructure field‐effect transistors utilising a polarisation induced two‐dimensional hole gas operate inherently in depletion mode. The condition for their conversion to enhancement‐mode operation is examined via analytical expressions for the threshold voltage and verified via technology computer‐aided design (TCAD) simulations. Between the two heterostructures: (i) conventional GaN/aluminium GaN (AlGaN)/GaN and (ii) alternate AlGaN/GaN/AlGaN/GaN examined in this work, the authors demonstrate at higher threshold voltage ( > − 2V ), the alternate heterostructure can potentially achieve a higher on‐current by a factor of 2 of ( ∼ 30 mA / mm ), without degradation in the on–off‐current ratio, expected ideally to be of the order of ∼ 12 .