Open AccessReverse‐recovery of diamond p‐i‐n diodes
Author(s) -
Traoré Aboulaye,
Nakajima Akira,
Makino Toshiharu,
Kuwabara Daisuke,
Kato Hiromitsu,
Ogura Masahiko,
Takeuchi Daisuke,
Yamasaki Satoshi
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0404
Subject(s) - diamond , diode , materials science , optoelectronics , composite material
Diamond p‐i‐n diodes are one of the most advanced and promising diamond devices for high‐power applications. The electrical characteristics of diamond p‐i‐n diodes have been extensively investigated in the static state, but their switching properties are unknown, and the recovery waveform is the main concern. This study highlights the switching properties of diamond p‐i‐n diodes used as freewheeling diodes in a clamped inductive switching circuit. The recovery waveform was measured by a wide range of conduction current, reverse blocking voltage, and switching speed. For the basic device design used (without edge termination), the p‐i‐n diode could be switched from a conducting state at 850 A/cm 2 to a blocking state at 400 V. The reverse recovery time was <150 ns. The reverse‐recovery depends on the on‐state current level, reverse voltage, and switching rate, illustrated the fast switching of diamond p‐i‐n diodes.