Open AccessMonolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
Author(s) -
Reiner Richard,
Waltereit Patrick,
Weiss Beatrix,
Moench Stefan,
Wespel Matthias,
Müller Stefan,
Quay Rüdiger,
Ambacher Oliver
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0397
Subject(s) - materials science , electrical engineering , high electron mobility transistor , transistor , gate driver , integrated circuit , diode , voltage , chip , buck converter , optoelectronics , slew rate , gallium nitride , electronic circuit , electronic engineering , engineering , nanotechnology , layer (electronics)
This study presents monolithically integrated power circuits, fabricated in a high‐voltage GaN‐on‐Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN‐high‐electron‐mobility transistor (HEMT) power device for the 600 V class and on‐state resistance of 53 mΩ. An area‐efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half‐bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 V RMS . The performance of the half‐bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.