Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

This study presents monolithically integrated power circuits, fabricated in a high‐voltage GaN‐on‐Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN‐high‐electron‐mobility transistor (HEMT) power device for the 600 V class and on‐state resistance of 53 mΩ. An area‐efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half‐bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 V RMS . The performance of the half‐bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.