Open AccessHigh‐efficiency neutral‐point‐clamped transformerless MOSFET inverter for photovoltaic applications
Author(s) -
Syed Ahmad,
Sandipamu Tara Kalyani,
Suan Freddy Tan Kheng
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0389
Subject(s) - mosfet , total harmonic distortion , photovoltaic system , materials science , inverter , silicon carbide , voltage , topology (electrical circuits) , diode , transistor , electrical engineering , optoelectronics , electronic engineering , engineering , metallurgy
Here, a highly efficient MOSFET neutral‐point‐clamped (M‐NPC) transformerless inverter is proposed for photovoltaic (PV) applications. By employing super‐junction metal–oxide–semiconductor field‐effect transistor (SJ‐MOSFET) as well as silicon carbide (SiC) diodes, high efficiency is achieved. Furthermore, the common‐mode voltage (CMV) is completely clamped at half of the input voltage with clamping branch. Therefore, leakage current is eliminated. The performances of different topologies, in terms of CMV, leakage current, total harmonic distortion (THD), losses, and efficiency, are compared with the proposed M‐NPC topology. The analyses are carried out theoretically via MATLAB/Simulink, and further validated with experimental tests. The experimental results show maximum efficiency of 98.5% and European efficiency of 97.65%.