Open AccessDesign considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range
Author(s) -
Siemieniec Ralf,
Braz Cesar,
Blank Oliver
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0385
Subject(s) - mosfet , voltage , electrical engineering , power semiconductor device , power mosfet , compensation (psychology) , transistor , materials science , range (aeronautics) , power (physics) , low voltage , field effect transistor , computer science , electronic engineering , optoelectronics , engineering physics , engineering , physics , psychology , quantum mechanics , psychoanalysis , composite material
Low‐voltage power metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on charge compensation using a field plate offer a significant reduction of the area‐specific on‐resistance. The extension of their blocking capability into the so‐called medium‐voltage range of 150–300 V promises devices with excellent properties being attractive for a wide range of applications. There are two approaches how this voltage‐range extension can be realised. Both concepts are linked to different device performance and different development effort. This study discusses both concepts using the example of the 150 V device class and compares the performance gained at the device and application level.