Open AccessInsulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications
Author(s) -
Sarrazin Benoit,
Hanna Rachelle,
Lefranc Pierre,
Am Sokchea,
Dumas Florian,
Lavieville JeanPaul
Publication year - 2017
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0321
Subject(s) - parasitic capacitance , electrical engineering , capacitance , voltage , materials science , power (physics) , direct current , overvoltage , engineering , optoelectronics , electrode , physics , quantum mechanics
The proposed study is about the design and experimental results of a power supply for gate drivers that can sustain 40 kV of insulation voltage with a parasitic capacitance of 4 pF. The first section focuses on insulation materials suitable for medium voltage capabilities and therefore to justify the use of polyesterimide and Teflon polytetrafluoroethylene materials. In a second step, experimental results are provided to guaranty that with a thickness of 1 mm of the insulation material, an insulation voltage of 40 kV is provided. Then, a DC–DC converter based on a series‐series topology is designed and lead to a physical prototype of 5 W. The measured parasitic capacitance is 4 pF between the primary and the secondary sides.