Open AccessJunction temperature estimation of IGBT module via a bond wires lift‐off independent parameter V gE‐np
Author(s) -
Peng Yingzhou,
Zhou Luowei,
Du Xiong,
Sun Pengju,
Wang Kaihong,
Cai Jie
Publication year - 2018
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2017.0168
Subject(s) - insulated gate bipolar transistor , junction temperature , materials science , voltage drop , bipolar junction transistor , common emitter , voltage , electrical engineering , mechanics , optoelectronics , transistor , engineering , physics , thermodynamics , thermal
An electrical method for junction temperature estimation of insulated‐gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal L E . The temperature‐dependent falling collector current during turn‐off transition would cause a negative voltage drop in the gate‐main emitter voltage waveform v gE . Therefore, this negative voltage drop V gE‐np is proportional to the junction temperature. A double‐pulse test circuit is developed to verify the accuracy and feasibility of the proposed method. The impacts of collector–emitter voltage V ce , collector current I c and bond‐wires cut‐off are also be discussed theoretically and experimentally. The experimental results show that the proposed V gE‐np has a linear relationship with junction temperature as theoretical analysis and it is a bond‐wires cut‐off independent parameter in some special test point, which offers an effective way to estimate junction temperature without package destruction. The advantages of the proposed method include good linearity, bond‐wires failure immunity and adequate sensitivity with junction temperature.