Open AccessMethodology for analysing radiated EMI characteristics using transient time domain measurements
Author(s) -
Middelstaedt Lars,
Lindemann Andreas
Publication year - 2016
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2015.0799
Subject(s) - emi , transient (computer programming) , time domain , electromagnetic interference , transient analysis , acoustics , computer science , electronic engineering , transient response , engineering , electrical engineering , physics , computer vision , operating system
In this study the switching characteristics of semiconductors are investigated as a main source of radiated electromagnetic interference (EMI). Especially, characteristic oscillations after the switching process influence the EMI characteristic of the circuit under investigation in the high frequency range. A method is introduced that analyses the turn‐on and the turn‐off characteristic of a MOSFET within a power factor correction stage separately, which are the critical source of EMI. A modified Hann window function is introduced in order to separate the frequency characteristic of the turn‐on and turn‐off characteristic. A generalised discussion on the mechanisms of radiated emissions in context with the transient behaviour is also given.