Open AccessTrans‐switched boost inverters
Author(s) -
Nguyen MinhKhai,
Lim YoungCheol,
Choi JoonHo,
Choi YounOk
Publication year - 2016
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2015.0202
Subject(s) - transformer , inverter , voltage , inductor , electrical engineering , electrical impedance , computer science , electronic engineering , engineering
Conventional switched boost inverters (SBIs) employ a single LC‐pair in the impedance network to boost the input voltage by setting a shoot‐through interval in the inverter bridge switches. This study extends the concept of SBIs to the transformer‐based switched boost inverters (trans‐SBIs). By changing the turn ratio of the transformer, the proposed trans‐SBIs can produce a strong voltage gain. Compared with a tapped‐inductor Z‐source inverter with the same voltage gain at the same transformer turn ratio, the proposed trans‐SBIs have only one extra active switch but significantly fewer passive components. Compared with trans‐ZSI, the proposed trans‐SBIs use a transformer with a lower turn ratio to achieve a higher boost factor. The required current rating of the switches in the proposed trans‐SBI is lower than for the alternative ZSIs. The operating principles and the analyses and comparisons with the conventional transformer‐based ZSIs are presented. To verify the high boost capability of the proposed inverters, a laboratory prototype was built for both the single‐phase and three‐phase trans‐SBIs.