Open AccessDevelopment of a 20 kV damped oscillating voltage generator
Author(s) -
Hou Zhe,
Yu Peixiang,
Li Hongjie,
Ji Shengchang,
Zhang Wei,
Zhou Hua,
Xu Fei
Publication year - 2016
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2015.0021
Subject(s) - insulated gate bipolar transistor , waveform , voltage , electrical engineering , generator (circuit theory) , power (physics) , bipolar junction transistor , high voltage , inductor , engineering , computer science , transistor , physics , quantum mechanics
This study describes the design and development of a 20 kV rated damped oscillating voltage (DOV) generator that can detect the partial discharge (PD) condition in 6/10 kV power cables. A complete system using a novel high‐voltage switch consisting of a series of connected insulated gate bipolar transistors (IGBTs) is designed and tested. The switch consists of ten identical IGBT switch units, a multiple output isolated power supply system and a trigger unit. Physically, it is a 60 cm diameter fan‐shaped printed circuit board. To coordinate the various tested objects and to comply with the IEC 60060‐3 standards, an air‐core inductor is calculated to precisely fit the most general application conditions using the magnetic vector potentials method. A laboratory prototype is assembled and tested. Waveforms illustrating the performance of the IGBT switch and the output of the DOV are presented. Finally, an application‐oriented test demonstrates that the scheme can successfully complete the PD test and PD location test for a cable sample.