
Survey on non‐isolated high‐voltage step‐up dc–dc topologies based on the boost converter
Author(s) -
Tofoli Fernando Lessa,
Pereira Dênis de Castro,
Josias de Paula Wesley,
Oliveira Júnior Demercil de Sousa
Publication year - 2015
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2014.0605
Subject(s) - converters , network topology , duty cycle , robustness (evolution) , electronic engineering , voltage , computer science , high voltage , context (archaeology) , topology (electrical circuits) , electrical engineering , engineering , paleontology , biochemistry , chemistry , biology , gene , operating system
The major consideration in dc–dc conversion is often associated with high efficiency, reduced stresses involving semiconductors, low cost, simplicity and robustness of the involved topologies. In the last few years, high‐step‐up non‐isolated dc–dc converters have become quite popular because of its wide applicability, especially considering that dc–ac converters must be typically supplied with high dc voltages. The conventional non‐isolated boost converter is the most popular topology for this purpose, although the conversion efficiency is limited at high duty cycle values. In order to overcome such limitation and improve the conversion ratio, derived topologies can be found in numerous publications as possible solutions for the aforementioned applications. Within this context, this work intends to classify and review some of the most important non‐isolated boost‐based dc–dc converters. While many structures exist, they can be basically classified as converters with and without wide conversion ratio. Some of the main advantages and drawbacks regarding the existing approaches are also discussed. Finally, a proper comparison is established among the most significant converters regarding the voltage stress across the semiconductor elements, number of components and static gain.