Open AccessModified single‐carrier multilevel sinusoidal pulse width modulation for asymmetrical insulated gate bipolar transistor‐clamped grid‐connected inverter
Author(s) -
Wu Fengjiang,
Duan Jiandong,
Feng Fan
Publication year - 2015
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2014.0519
Subject(s) - pulse width modulation , inverter , electronic engineering , insulated gate bipolar transistor , modulation (music) , bipolar junction transistor , computer science , transistor , engineering , voltage , electrical engineering , physics , acoustics
Conventional sinusoidal pulse width modulation (SPWM) for single‐phase asymmetrical seven‐level insulated gate bipolar transistor (IGBT)‐clamped grid‐connected inverter (IC‐GCI) needs an additional logic operation circuit and a dead zone generation circuit, which raises cost and complicates the implementation. In addition, both added circuitries decrease the reliability. In this study, a modified single‐carrier multilevel SPWM (MSCM‐SPWM) scheme suitable for IC‐GCI is proposed. By setting one carrier, three digital signals to identify voltage zones and six equivalent modulation waves, the control signals of the switches in IC‐GCI can be generated with only one digital signal processor controller and simple logic operation. It makes the implementation of the multilevel GCI easier. The detailed spectral character of the MSCM‐SPWM is originally derived based on double‐Fourier integral theory and then compared with the conventional scheme. It proves that they own the similar spectral character. Detailed simulation and experimental results verify the accuracy and feasibility of the MSCM‐SPWM and the single‐phase IC‐GCI.