Open AccessAdvanced hexagonal layout design for split‐gate reduced surface field stepped oxide U‐groove metal–oxide–semiconductor field‐effect transistor
Author(s) -
Ying Wang,
HaiFan Hu,
ChengHao Yu,
JiaTong Wei
Publication year - 2015
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2013.0975
Subject(s) - groove (engineering) , materials science , transistor , oxide , electric field , optoelectronics , hexagonal crystal system , field effect transistor , figure of merit , field (mathematics) , doping , voltage , electrical engineering , engineering , physics , chemistry , crystallography , mathematics , metallurgy , quantum mechanics , pure mathematics
Split‐gate reduced surface field (RESURF) stepped oxide (SGRSO) device with advanced hexagonal p‐pillar (AHP) layout is investigated using three‐dimensional simulations. The AHP layout can improve the on‐state characteristics while not increasing the process difficulty. The p‐pillar under the source electrode enhances the RESURF effect to the n‐drift region, so that the n‐drift region doping concentration could be substantially increased and the breakdown voltage is not reduced. Based on the SGRSO device, the AHP layout modifies the electric field distribution in the n‐drift region, and reduces the R SP as compared with the common hexagonal and mesa strip layout structures. The figure of merit of the AHP layout improves by 49.8% as compared with the other two types of layouts, and the AHP has superior characteristics within a wider N D range.