Open AccessImproved trench MOS barrier Schottky rectifier by dielectric engineering
Author(s) -
Ying Wang,
Likun Xu,
Kun Ding
Publication year - 2014
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2013.0173
Subject(s) - trench , schottky barrier , rectifier (neural networks) , materials science , metal–semiconductor junction , optoelectronics , dielectric , schottky diode , electrical engineering , engineering physics , computer science , composite material , engineering , diode , artificial intelligence , stochastic neural network , layer (electronics) , recurrent neural network , artificial neural network
An improved trench MOS barrier Schottky (TMBS) rectifier by dielectric engineering variable K TMBS (VK‐TMBS) is proposed and studied by two‐dimensional numerical simulations. The device shows increasing forward current density and reduction in specific on‐resistance ( R sp ), as compared with a regular TMBS rectifier. VK‐TMBS attains a breakdown voltage of 140 V, which is larger than that of the original TMBS. The forward voltage drop of TMBS is 0.64 V at 180 A/cm 2 , and that of VK‐TMBS is 0.59 V. The R sp of VK‐TMBS is 26.7% smaller than that of the TMBS. The numerical simulation results indicate that the proposed device features high performance with an improved figure of merit.