Open AccessSPICE model of thyristors with amplifying gate and emitter‐shorts
Author(s) -
Zekry Abdelhalim A.,
Sayah Gihan Taha,
Soliman Fouad A.
Publication year - 2014
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2013.0158
Subject(s) - spice , thyristor , common emitter , electrical engineering , gate turn off thyristor , engineering , voltage , gate oxide , transistor
In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter‐shorts. This model is based on the two‐dimensional two‐transistor circuit model of a thyristor. The authors use Gummel–Poon circuit model that takes into consideration the high injection effects and the conductivity modulation of the low n ‐doped region. The model parameters are defined and extracted according to a new methodology. The simulation results are compared with experimental measurements. It has been found that the developed model satisfactorily describes the performance of the thyristor under practical operating conditions.