Open AccessSource switching circuit with low‐gate‐driving loss in high‐voltage buck light emitting diode driver
Author(s) -
Liao TseJu,
Hung ChiaChieh,
Chen ChernLin
Publication year - 2013
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/iet-pel.2012.0495
Subject(s) - light emitting diode , diode , voltage , materials science , optoelectronics , driver circuit , gate driver , electrical engineering , engineering
Source switching circuit with low‐gate‐driving loss in high‐voltage buck light emitting diode (LED) driver is proposed in this study. Source switching circuit comprises of a high‐voltage power metal‐oxide semiconductor field‐effect transistor (MOSFET) (HVMOS) and a low‐voltage power MOSFET (LVMOS) in series, a capacitor and a Zener diode. By switching the HVMOS by different source voltage and constant gate voltage, it recycles gate charges of HVMOS to reduce gate‐driving loss. Gate charges are recycled in the capacitor when LVMOS is turning off, and can be reused when LVMOS is turning on. This circuit also provides a new power feeding route for control chip, and power consumption is relatively low on the proposed route. The power feeding route also improves power efficiency. With a 12 W LED load, the experiment shows that the efficiency of the proposed driving circuit is improved by 3.7% with 156 V input voltage and 4.8% with 326 V input voltage compared with the converter using single HVMOS.