Open AccessDesign of CuIn 1− y Ga y Se 2 /Si 1 − x Ge x Tandem solar cells with controlled current matching
Author(s) -
Gharibshahian Iman,
Sharbati Samaneh,
Orouji Ali Asghar
Publication year - 2020
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2019.0060
Subject(s) - solar cell , tandem , materials science , energy conversion efficiency , band gap , optoelectronics , photovoltaic system , solar cell efficiency , copper indium gallium selenide solar cells , gallium , electrical engineering , metallurgy , composite material , engineering
A tandem solar cell including of CuIn 1− y Ga y Se 2 /Si 1 − x Ge x was exhibited by integrating a CuIn 1− y Ga y Se 2 solar cell on a Si 1 − x Ge x solar cell to achieve a conversion efficiency of about 26% by controlled current matching. Electrical analyses were used to determine the performance parameters of the bottom and top sub‐cells. In this work, an experimental Si 0.73 Ge 0.27 solar cell has been modelled. The photovoltaic characteristics of the Si 0.73 Ge 0.27 solar cell are in good agreement with its experimental counterpart. Afterwards, a copper–gallium–diselenide (CGS)/Si 0.73 Ge 0.27 tandem solar cell with 24.1% efficiency has been designed. Additionally, the bandgap combination of CuIn 1− y Ga y Se/Si 1 − x Ge x structure has been studied. The findings indicate that CuIn 1− y Ga y Se/Si 1 − x Ge x tandem cell with 0.7 < y < 1 and 0 < x < 0.7 can achieve acceptable efficiency and the optimised CGS/Si device with 26.1% efficiency is proposed. In CGS/Si 0.73 Ge 0.27 tandem cell, the current matching is obtained when the CGS thickness of the top cell is 1 µm and the Si 0.73 Ge 0.27 absorber thickness of the bottom cell is 1.9 µm. The current matching condition for this device degrades the fill factor, although increases the current, so the device does not achieve maximum output power.