Open AccessInAs/GaAs quantum dot solar cells with quantum dots in the base region
Author(s) -
Chan Shun,
Kim Dongyoung,
Sanchez Ana M.,
Zhang Yunyan,
Tang Mingchu,
Wu Jiang,
Liu Huiyun
Publication year - 2019
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2018.5069
Subject(s) - quantum dot , solar cell , optoelectronics , open circuit voltage , materials science , base (topology) , energy conversion efficiency , short circuit , voltage , quantum dot solar cell , gallium arsenide , polymer solar cell , electrical engineering , engineering , mathematical analysis , mathematics
In this work, the influence of quantum dot (QD) position on the performance of solar cells was studied. The presence of QDs within the base regions leads to improved open circuit voltage ( V oc ) from 0.73 to 0.90 V. Despite a slight reduction in short‐circuit current ( J sc ) due to carrier collection loss, the enhancement of the V oc of QDSCs with QDs in base region is significant enough to ensure that power conversion efficiencies ( η ) are higher than the reference quantum dot solar cell (QDSC) of which QDs are embedded in the intrinsic region. Moreover, sample with QDs in deep base region achieved the highest η of 9.75%, an increase of 29% with regard to the reference quantum dot solar cell.