Open AccessLow‐loss inverted taper edge coupler in silicon nitride
Author(s) -
Fernández Juan,
Baños Rocío,
Doménech David,
Domínguez Carlos,
Muñoz Pascual
Publication year - 2019
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2018.5065
Subject(s) - insertion loss , fabrication , silicon nitride , enhanced data rates for gsm evolution , materials science , optoelectronics , power dividers and directional couplers , silicon , waveguide , nitride , optics , engineering , telecommunications , nanotechnology , layer (electronics) , physics , medicine , alternative medicine , pathology
An inverted lateral taper with one vertical discrete step was designed for a medium confinement silicon nitride waveguide platform in the C‐band, as a chip edge coupler, with a predicted insertion loss of 0.58 dB. The design is supported by an extensive study to evaluate the impact of fabrication process variations on the performance of such a coupler. The device was manufactured and measured, showing an insertion loss of 1.47 dB, which was traced back to fabrication process variations as cross‐checked with simulations. To the authors’ knowledge, the reported edge coupler is the shortest and among the best performing found for silicon nitride platforms.