Open AccessInfluences of contact electrode shape and incidence direction on p‐i‐n photodiodes
Author(s) -
Liu Tao,
Huang Yongqing,
Fei Jiarui,
Chen Qingtao,
Ma Xiaokai,
Duan Xiaofeng,
Liu Kai,
Ren Xiaomin
Publication year - 2019
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2018.5037
Subject(s) - responsivity , photodiode , photocurrent , electrode , materials science , optoelectronics , bandwidth (computing) , optics , photodetector , telecommunications , chemistry , physics , engineering
The influences of contact electrode shape and vertical illumination direction on the performance of p‐i‐n photodiodes (PDs) are studied by theory and experiment. The PDs with ring‐covered p‐contact electrode (RCC‐PD) and fully‐covered p‐contact electrode (FCC‐PD) were fabricated and tested. For the RCC‐PD, the influences of p‐side and n‐side illumination on the bandwidth also analysed. The results show that for the PDs with 40 μm mesa diameter under −3 V bias and 7.0 mA output photocurrent, a 40.6 and 31.6% increase of bandwidth and responsivity in the FCC‐PD compared with RCC‐PD. The 3 dB bandwidth and responsivity of the FCC‐PD with a 40 μm mesa diameter at −3 V bias can reach 33.6 GHz and 0.5 A/W, respectively.