Open AccessImpact of thermal annealing on internal device parameters of GaAs 0.965 Bi 0.035 /GaAs 0.75 P 0.25 quantum well lasers
Author(s) -
Kim Honghyuk,
Guan Yingxin,
Kuech Thomas F.,
Mawst Luke J.
Publication year - 2019
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2018.5031
Subject(s) - quantum well , materials science , annealing (glass) , optoelectronics , photoluminescence , laser , diode , gallium arsenide , thermal , differential gain , optics , semiconductor laser theory , physics , composite material , thermodynamics
The impact of post‐growth thermal annealing on the internal device parameters such as internal loss ( α i ), internal differential quantum efficiency ( η 0 d ) and modal material gain (Γ g 0 J ) of a single‐quantum well (QW) laser diodes employing GaAs 0.965 Bi 0.035/ GaAs 0.75 P 0.25 active regions and emitting near λ ∼980 nm was investigated. Parameter extraction from a conventional cavity length analysis indicates that the internal loss remains unchanged while internal differential quantum efficiencies degrade as the annealing time increases. Also, the variation of the modal material gain with annealing correlates to the corresponding change in the photoluminescence intensity. Comparisons between single‐‐ and double‐QW devices indicate that the relatively high internal loss originates from the QW active region.