Open AccessEnhanced gain saturation model of non‐linear semiconductor optical amplifiers
Author(s) -
Kharraz O.M.,
Supa'at A.S.M.,
Atieh A.,
Zamzuri A.K.,
Mahdi M.A.
Publication year - 2018
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2018.5029
Subject(s) - saturation (graph theory) , gain compression , optical amplifier , materials science , gallium arsenide , semiconductor , amplifier , semiconductor optical gain , rate equation , optoelectronics , optics , semiconductor laser theory , physics , mathematics , laser , cmos , combinatorics , quantum mechanics , kinetics
This study proposes an enhanced gain saturation model of non‐linear semiconductor optical amplifiers (SOAs) by incorporating material‐dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium–Gallium–Arsenide material‐based SOA to account for the steep relaxation oscillations behaviour of non‐linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094.