Open AccessTheoretical simulation of the thermoelectrically cooled HgCdTe LWIR detector for fast response operating under unbiased conditions
Author(s) -
Martyniuk Piotr,
Madejczyk Paweł,
Kopytko Małgorzata,
Henig Aleksandra Magdalena,
Grodecki Kacper,
Gawron Waldemar,
Rutkowski Jarosław
Publication year - 2018
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2017.0161
Subject(s) - responsivity , detector , response time , time constant , operating temperature , capacitance , optoelectronics , photodetector , materials science , thermoelectric cooling , infrared , infrared detector , optics , physics , thermoelectric effect , computer science , electrical engineering , engineering , computer graphics (images) , electrode , quantum mechanics , thermodynamics
This study reports on photoelectrical performance of the long‐wave infrared HgCdTe high operating temperature (200–230 K) detector for the fast response time operating under unbiased conditions. The detailed analysis of the response time as a function of device architecture was conducted pointing out optimal working conditions and structure. The response time of the long‐wave ( x Cd = 0.19) HgCdTe detector for temperatures reached by thermoelectrical cooling (200–230 K) was estimated at the level of τ s < 0.6 ns for unbiased condition while responsivity R i ∼ 1.8 A/W and detectivity was assessed at the level of D * ∼ 1.6 × 10 10 cm Hz 1/2 /W. It was shown that extra series resistance R series < 10 Ω (resistance–capacitance time constant) plays a decisive role in order to reach τ s < 1 ns meaning that device processing is much more important rather than fundamental limitations imposed by physics.