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Erratum: Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher
Publication year - 2018
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2017.0140
Subject(s) - avalanche photodiode , materials science , optoelectronics , optics , physics , detector

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