Open AccessEffect of rapid thermal annealing on InAs/GaAs quantum dot solar cells
Author(s) -
Lam Phu Minh,
Wu Jiang,
Hatch Sabina,
Kim Dongyoung,
Tang Mingchu,
Liu Huiyun,
Wilson James,
Allison Rebecca
Publication year - 2015
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2014.0079
Subject(s) - photocurrent , quantum dot , annealing (glass) , materials science , optoelectronics , metallurgy
The effect of post‐growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post‐growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm −2 for as‐grown sample to 5.8 mA cm −2 . We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post‐growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.