Optimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates | Zendy

Tang Mingchu | Zendy; Wu Jiang | Zendy; Chen Siming | Zendy; Jiang Qi | Zendy; Seeds Alwyn J. | Zendy; Liu Huiyun | Zendy; Dorogan Vitaliy G. | Zendy; Benamara Mourad | Zendy; Mazur Yuriy | Zendy; Salamo Gregory | Zendy

Open Access

Optimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates

Author(s) -

Tang Mingchu,

Wu Jiang,

Chen Siming,

Jiang Qi,

Seeds Alwyn J.,

Liu Huiyun,

Dorogan Vitaliy G.,

Benamara Mourad,

Mazur Yuriy,

Salamo Gregory

Publication year - 2015

Publication title -

iet optoelectronics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.379

H-Index - 42

eISSN - 1751-8776

pISSN - 1751-8768

DOI - 10.1049/iet-opt.2014.0078

Subject(s) - optoelectronics , superlattice , materials science , laser , quantum dot , dislocation , gallium arsenide , substrate (aquarium) , layer (electronics) , quantum dot laser , semiconductor laser theory , semiconductor , optics , nanotechnology , physics , composite material , oceanography , geology

The authors report 1.3‐μm InAs/GaAs quantum‐dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm 2 at room temperature and an operating temperature as high as 85°C is successfully demonstrated. These results show the potential for integrating III–V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.

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