Open AccessOptimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates
Author(s) -
Tang Mingchu,
Wu Jiang,
Chen Siming,
Jiang Qi,
Seeds Alwyn J.,
Liu Huiyun,
Dorogan Vitaliy G.,
Benamara Mourad,
Mazur Yuriy,
Salamo Gregory
Publication year - 2015
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2014.0078
Subject(s) - optoelectronics , superlattice , materials science , laser , quantum dot , dislocation , gallium arsenide , substrate (aquarium) , layer (electronics) , quantum dot laser , semiconductor laser theory , semiconductor , optics , nanotechnology , physics , composite material , oceanography , geology
The authors report 1.3‐μm InAs/GaAs quantum‐dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm 2 at room temperature and an operating temperature as high as 85°C is successfully demonstrated. These results show the potential for integrating III–V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.