Open AccessElectrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates
Author(s) -
Wu Jiang,
Lee Andrew,
Jiang Qi,
Tang Mingchu,
Seeds Alwyn J.,
Liu Huiyun
Publication year - 2014
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2013.0093
Subject(s) - optoelectronics , lasing threshold , laser , materials science , molecular beam epitaxy , quantum dot , quantum dot laser , layer (electronics) , continuous wave , wavelength , gallium arsenide , epitaxy , semiconductor laser theory , optics , nanotechnology , semiconductor , physics
Continuous‐wave (CW) operation of InAs/GaAs quantum dot (QD) lasers monolithically grown on Si substrates by molecular beam epitaxy is presented. The peak lasing wavelength of 1278 nm is accompanied by a low threshold current density of 458 A/cm 2 at 8°C using a GaAs buffer layer directly grown on the Si substrates. The improvement in laser performance is due to improved crystal quality of the GaAs buffer layer. The demonstration of a CW QD laser also benefits from using top–top contacts, which route the current through the laser active layer to avoid the high‐density defects near the Si/GaAs interface. These results demonstrate the growing potential of the monolithically integrated III–V QD lasers on the Si substrates.