Open AccessCharacterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
Author(s) -
GarduñoNolasco Edson,
Carrington Peter J.,
Krier Anthony,
Missous Mohamed
Publication year - 2014
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/iet-opt.2013.0056
Subject(s) - quantum dot , molecular beam epitaxy , materials science , optoelectronics , dopant , photovoltaic system , current density , short circuit , open circuit voltage , doping , voltage , epitaxy , nanotechnology , layer (electronics) , electrical engineering , physics , engineering , quantum mechanics
The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 10 10 cm −2 , respectively, in between the QD layers. Under a 1 sun illumination, the open‐circuit voltage ( V oc ) and the efficiency of the 8 × 10 10 cm −2 n‐doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short‐circuit current density ( J sc ) decreased from 20.1 to 17.4 mA/cm 2 indicating bandfilling within the QD array.