Open Access1.1 THz tenth harmonic mixer based on planar GaAs Schottky diode
Author(s) -
Zhang Bo,
Lv Xiaolin,
He Jie,
Xing Dong,
Fan Yong,
Chen Xiaodong
Publication year - 2019
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2018.6194
Subject(s) - schottky diode , terahertz radiation , materials science , transmission line , diode , optoelectronics , harmonic mixer , radio frequency , microstrip , harmonic , planar , varicap , intermediate frequency , optics , electrical engineering , physics , local oscillator , capacitance , engineering , acoustics , computer graphics (images) , electrode , quantum mechanics , computer science
Here, the tenth harmonic mixing technology based on planar GaAs Schottky diode is first proposed for the 1.1 terahertz (THz) frequency conversion module. The first higher order mode cut‐off frequency of the suspended microstrip line has been investigated to determine the appropriate cross‐sectional dimension of transmission line shield cavity in the radio frequency (RF) circuit portion. The height of shield cavity of transmission line is designed to be discontinuous in order to facilitate the assembly of the diode. A modelling approach combining field and circuit is used to achieve joint simulation of linear passive structure and diode non‐linear characteristics. The simulation results show that the frequency conversion loss of this mixer is <55 dB in the RF frequency range of 1.03–1.154 THz, and the best frequency conversion loss is 50 dB at RF of 1.098 THz.