A 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression | Zendy

Nguyen Thuy T. | Zendy; Fujii Kohei | Zendy; Pham AnhVu | Zendy

Open Access

A 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression

Author(s) -

Nguyen Thuy T.,

Fujii Kohei,

Pham AnhVu

Publication year - 2019

Publication title -

iet microwaves, antennas and propagation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.555

H-Index - 69

eISSN - 1751-8733

pISSN - 1751-8725

DOI - 10.1049/iet-map.2018.5635

Subject(s) - wideband , watt , harmonic , amplifier , power (physics) , electrical engineering , electronic engineering , distributed amplifier , engineering , rf power amplifier , computer science , physics , acoustics , cmos , quantum mechanics

This study presents the first fully integrated, push–pull, high power distributed amplifier (DA) for wideband applications in 0.25 µm Gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process. A triple‐stacked field‐effect transistor cell is employed for each stage of the DA along with the non‐uniform distributed power amplifier topology to maximise the output power. The experimental results show that the amplifier exhibits from 7 to 10 dB gain with vi30–32 dBm output power at 1 dB compression (P1 dB) and 32–35.4 dBm saturated output power ( P sat ) covering a frequency bandwidth from 4 to 20 GHz. The measured second harmonic suppression is >33 dBc from 8 to 40 GHz at the P1 dB operating condition.

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