Open AccessA 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression
Author(s) -
Nguyen Thuy T.,
Fujii Kohei,
Pham AnhVu
Publication year - 2019
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2018.5635
Subject(s) - amplifier , power bandwidth , wideband , rf power amplifier , electrical engineering , distributed amplifier , power added efficiency , gallium arsenide , transistor , linear amplifier , power gain , dbc , materials science , harmonic , optoelectronics , engineering , physics , voltage , acoustics , cmos , phase noise
This study presents the first fully integrated, push–pull, high power distributed amplifier (DA) for wideband applications in 0.25 µm Gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process. A triple‐stacked field‐effect transistor cell is employed for each stage of the DA along with the non‐uniform distributed power amplifier topology to maximise the output power. The experimental results show that the amplifier exhibits from 7 to 10 dB gain with vi30–32 dBm output power at 1 dB compression (P1 dB) and 32–35.4 dBm saturated output power ( P sat ) covering a frequency bandwidth from 4 to 20 GHz. The measured second harmonic suppression is >33 dBc from 8 to 40 GHz at the P1 dB operating condition.