Open AccessDifferential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology
Author(s) -
Zhao Chenxi,
Wu Yipeng,
Liu Huihua,
Wu Yunqiu,
Kang Kai
Publication year - 2019
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2018.5378
Subject(s) - transceiver , cmos , insertion loss , differential (mechanical device) , phased array , electrical engineering , ku band , rf switch , electronic engineering , physics , materials science , engineering , radio frequency , antenna (radio) , thermodynamics
Here, a Ku‐band transmit/receive (T/R) differential switch using the 180‐nm CMOS process is presented. The differential structure method is chosen to realise easy integration with other RF components. From 15–18 GHz, the measured insertion loss (IL) of the switch in the transmit (TX) and receive (RX) mode is 4.3 and 4.1 dB, respectively. The isolation is better than 20 dB in both modes. The design achieves a measured input 1 dB power compression point ( IP 1 dB ) of 13.5 dBm at 17 GHz. The differential T/R switch integrated in a Ku‐band‐phased array transceiver demonstrates that it is a promising technology for implementing fully integrated transceiver.