
Frequency tuning hysteresis of a dual‐resonance divide‐by‐three cross‐coupled injection‐locked frequency divider
Author(s) -
Jang ShengLyang,
Jian ShihJie,
Hsue ChingWen
Publication year - 2018
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2017.0592
Subject(s) - frequency divider , materials science , resonator , resonance (particle physics) , injection locking , capacitive sensing , power (physics) , voltage , electrical engineering , optoelectronics , cmos , engineering , optics , physics , atomic physics , laser , quantum mechanics
This paper studies the frequency tuning effect on the locking range property of a dual‐resonance 3:1 injection‐locked frequency divider (ILFD) fabricated in a foundry 0.18 μm BiCMOS process. The ILFD architecture is based on a capacitive cross‐coupled oscillator in conjunction with a resistor‐degraded dual‐resonance resonator for the locking range improvement. At a power consumption of 5.26 mW and at injection power of P inj = 0 dBm the locking range from the measurement is from 6.2 to 12.6 GHz (68.09%). The frequency tuning range of the free‐running ILFD shows a frequency tuning hysteresis effect; at low input power level the locking range shows bipolar locking ranges and at high injection power the locking range is independent of the measured voltage tuning direction.