Open AccessTwo‐dimensional distributed amplifier for extreme extension of GBW, PAE and OP 1dB
Author(s) -
Mogheyse Amir Hamze,
MiarNaimi Hossein
Publication year - 2017
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2016.1042
Subject(s) - amplifier , distributed amplifier , resistor , bandwidth (computing) , electronic engineering , power gain , noise figure , transistor , electrical engineering , cmos , engineering , power (physics) , rf power amplifier , physics , telecommunications , quantum mechanics , voltage
In this study, a new technique is introduced for full power combining in distributed amplifiers which contain multiplicative gain stages. Produced powers from middle stages of multiplicative structures are always wasted in terminating resistors. This study shows that an electrical funnel can be used to combine all produced powers from all stages. To do so, two configurations are considered to terminate middle stages with transistors. It is shown how a typical distributed amplifier can be converted to a two‐dimensional distributed amplifier (2D‐DA). Analytical expressions for gain calculation are also presented. All inductors and connections of 2D‐DA are simulated by advanced design system (ADS) electromagnetic simulator with TSMC 0.18 CMOS layout specifications. Post‐layout simulation results show the trueness of the presented relations. The designed 2D‐DA shows 17.4 dB gain along 0.7–25.7 GHz bandwidth by consuming 75.2 mW DC power. More than 3.9 dBm output power at 1 dB output compression point (OP 1dB ) is achieved and the noise figure of the 2D‐DA is between 3.6 and 6.4 dB. Using 2D‐DA, produced powers from middle stages participate in the outgoing power. This helps to improve gain bandwidth (GBW), power added efficiency (PAE) and OP 1dB by 84.3, 143 and 86%.