Open AccessHigh‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function
Author(s) -
Um Youngman,
Nguyen Cam
Publication year - 2017
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2016.0198
Subject(s) - nmos logic , cmos , insertion loss , electrical engineering , port (circuit theory) , multi band device , shunt (medical) , physics , materials science , optoelectronics , transistor , engineering , voltage , medicine , antenna (radio) , cardiology
Fully integrated 0.18‐µm CMOS dual‐band band‐pass filtering transmit/receive (T/R) switch operating in two frequency bands of 35.5–43.7 and 56.5–63 GHz is reported. The developed T/R switch consists of three single‐pole double‐throw switches, each designed based on a band‐pass filter with shunt nMOS transistors performing the switching function. The measured insertion losses of the switch are 8.9/12.5 and 10/12.7 dB for receiving and transmitting operations at 40/60 GHz, respectively. The measured stop‐band rejection ratio between 40 and 51 GHz is over 30/22 dB for two operations, respectively. The measured isolation is 56/51 and 57/51 dB for two operations at 40/60 GHz, respectively. The measured input 1‐dB compression points of the switch are 23, 16.5 for single‐tone 40‐, 60‐GHz input signal and 18/14 dBm at 40/60 GHz for concurrent dual‐tone 40/60‐GHz input signals for transmitting operation, respectively. The total chip size is 1840 µm × 860 µm excluding all the testing pads.