Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS | Zendy

Curtis Jeffery | Zendy; Pham AnhVu | Zendy; Aryanfar Farshid | Zendy

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Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS

Author(s) -

Curtis Jeffery,

Pham AnhVu,

Aryanfar Farshid

Publication year - 2016

Publication title -

iet microwaves, antennas and propagation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.555

H-Index - 69

eISSN - 1751-8733

pISSN - 1751-8725

DOI - 10.1049/iet-map.2015.0818

Subject(s) - dbm , amplifier , power (physics) , electrical engineering , materials science , optoelectronics , physics , engineering , cmos , quantum mechanics

The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka‐band. The amplifier is fabricated in a 0.15‐µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The DPA has a centre frequency of 26.6 GHz, a measured small signal gain of 10.5 dB, output power at 1‐dB compression point (P1 dB) of 26.9 dBm, maximum power added efficiency (PAE) of 42%, and PAE of 32% at 6 dB back‐off power. To the best of the author's knowledge, this DPA is the first millimetre‐wave (mm‐wave) power amplifier to achieve a record 32% PAE at 6‐dB back‐off power from 26.9 dBm at Ka‐band.

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