Open AccessKa‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS
Author(s) -
Curtis Jeffery,
Pham AnhVu,
Aryanfar Farshid
Publication year - 2016
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2015.0818
Subject(s) - amplifier , dbm , high electron mobility transistor , materials science , gallium arsenide , power added efficiency , electrical engineering , power bandwidth , power (physics) , transistor , optoelectronics , monolithic microwave integrated circuit , power gain , rf power amplifier , engineering , physics , voltage , cmos , quantum mechanics
The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka‐band. The amplifier is fabricated in a 0.15‐µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The DPA has a centre frequency of 26.6 GHz, a measured small signal gain of 10.5 dB, output power at 1‐dB compression point (P1 dB) of 26.9 dBm, maximum power added efficiency (PAE) of 42%, and PAE of 32% at 6 dB back‐off power. To the best of the author's knowledge, this DPA is the first millimetre‐wave (mm‐wave) power amplifier to achieve a record 32% PAE at 6‐dB back‐off power from 26.9 dBm at Ka‐band.